‧Advanced low-power architecture
* High speed: 55 ns, 70 ns
* Wide voltage range: 2.7V to 3.6V
* Typical active current: 2 mA @ f = 1 MHz
* Typical active.

such as cellular telephones. The device can be put into standby mode when deselected ( CE HIGH or both BHE and BLE are H.

of read and write modes. Functional Description The M24L816512SA is a high-performance CMOS pseudo static RAM (PSRAM) organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to .

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